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KOH:K3Fe(CN)6 - GaP - Wet Etchant by Chemical Composition

Material Name: GaP
Recipe No.: 5943
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: KOH:K3Fe(CN)6:H2O (3:1:60)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaP etch rate at 21 C = 0.03 µm/min; Ref. (Kaminska, E.A., 1981).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 233.