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KOH:K3Fe(CN)6 - GaP - Wet Etchant by Chemical Composition

Material Name: GaP
Recipe No.: 5946
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: H2O:KOH:K3Fe(CN)6 (50 ml:6 g:4 g); 1-2 min at 100 C.
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Etch rate = 20-25 µm/h; Ref. (Saul, R.H., 1968).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 233.