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KOH:K2S2O8 - GaN - Wet Etchant by Chemical Composition

Material Name: GaN
Recipe No.: 5947
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: KOH solution + 0.02 M K2S2O8
Procedure (Condition): No data
Note: Wet etchant by chemical composition. photoenhanced etching of GaN using a Pt mask; Ref. (Bardwell, J.A., 1999).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 233.