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KOH:NaOH - GaAs - Wet Etchant by Chemical Composition

Material Name: GaAs
Recipe No.: 5949
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: KOH:NaOH (50 mol%:50 mol%)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs defect delineation etch; used at 170 C eutectic melting temperature; keeps surfaces smooth compared to molten KOH; shows defects in nominally zero dislocation GaAs; Ref. (Lessoff, H., 1984).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 234.