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KOH:NaOH - GaAs - Wet Etchant by Chemical Composition

Material Name: GaAs
Recipe No.: 5950
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: NaOH-KOH eutectic, molten
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs etch pit defect delineation; 30 min at 350 C, etch rate ~0.08 µm/min; when used in sequence with A-B etch more information is revealed than with either etch individually; Ref. (Nordquist, P.E.R., 1993).
Reference: A.R. Clawson, Guide to references on III-V semiconductor chemical etching, Materials Science and Engineering (Original Reference List), 31 (2001), p. 234.