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InGaAsP - Dry and Wet Etching

Material Name: InGaAsP
Recipe No.: 6526
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry and wet etching
Etchant (Electrolyte) Composition:
Reactive ion etch of deep grooves for multiple mirrors in InGaAsP MQW lasers using CH4/H2 and O2 ashing to remove polymer buildup.
H2SO4:H2O2:H2O (1:1:40); step 1 in damage removal from RIE etched InGaAsP/InP; 0 C for 70 s.
HCl:H2O (1:10); step 2 in damage removal from RIE etched InGaAsP/InP 1 min at room temp.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MADHAN RAJ, M., J. Wiedmann, Y. Saka, H. Yasumoto, and S. Arai, High reflectivity laser facets by deeply etched DBR buried with benzocyclobutene, Proc. 11th Int'l Conf. on Indium Phosphide and Related Materials, p. 10 (1999b).