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InP and InGaAsP - Wet Etching

Material Name: InP and InGaAsP
Recipe No.: 6527
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
Defect delineation etchants; Application to InP and InGaAsP: H3PO4:HBr (2:1) {Huber etch} at RT for ~2 min.
HNO3:H2O:HCl (6:6:1) at 60 C for 90 s.
HCl:HNO3:Br2 (40:80:1) {RRE etch} at 25 C for 10 s.
H2O:AgNO3:CrO3:HF (10 ml:40 mg:5 g:8 ml) {A-B etch} at 75 C for 30 min.
HBr:HF (1:15) at RT for 1-5 min.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MAHAJAN, S., and A.K. Chin, The Status of Current Understanding of InP and InGaAsP Materials, J. Cryst. Growth, 54, 138±49 (1981).