Alphabetical Index
Browse by Elements
Keyword Search

Dry Etchants
Dry and Wet Etchants
Wet Etchants

Bulk Etchants
Layer Etchants
Nano Etchants
Single Crystal Etchants
Thin Film Etchants
Thin Foil Etchants
Wafer Etchants

Al Etchants
Cd Etchants
Ga Etchants
Ge Etchants
In Etchants
New Etchants
Other Etchants
Si Etchants
Zn Etchants

Help
Home

AlxGa(1-x)As from GaAs - Wet Etching

Material Name: AlxGa(1-x)As from GaAs
Recipe No.: 6528
Primary Chemical Element in Material: Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
I2:KI:H2O (65 g:113 g:100 g); selective removal of AlxGa(1-x)As from GaAs if x > 0.1.
HCl, hot; selective removal of AlxGa(1-x)As from GaAs if x > 0.42.
HF, hot; selective removal of AlxGa(1-x)As from GaAs if x > 0.38.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MALAG, A., J. Ratajczak, and J. GAZECKI, AlxGa(1-x)As/GaAs heterostructure characterization by Wet etching, Mater. Sci. Eng., B20, 332-338 (1993).