Alphabetical Index
Browse by Elements
Keyword Search

Dry Etchants
Dry and Wet Etchants
Wet Etchants

Bulk Etchants
Layer Etchants
Nano Etchants
Single Crystal Etchants
Thin Film Etchants
Thin Foil Etchants
Wafer Etchants

Al Etchants
Cd Etchants
Ga Etchants
Ge Etchants
In Etchants
New Etchants
Other Etchants
Si Etchants
Zn Etchants

Help
Home

Al0.28Ga0.72As - Wet Etching

Material Name: Al0.28Ga0.72As
Recipe No.: 6529
Primary Chemical Element in Material: Al
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
Citric acid:H2O2:H2O; Study of GaAs versus Al0.28Ga0.72As etch rate dependence on citric acid:H2O2 ratio and on H2O concentration.
Citric acid:H2O2:H2O (4:1:1); non-selective GaAs, AlGaAs etch rate ~4000 A/min.
Citric acid:H2O2 (4:1); selective etch of GaAs from Al0.28Ga0.72As.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MAO, B.-Y., J.A. Nielsen, R.A. Friedman, and G.Y. Lee, The Application of Citric Acid/Hydrogen Peroxide Etching Solutions in the Processing of Psedomorphic MODFETs, J. Electrochem. Soc., 141(4), 1082-85 (1994).