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AlGaAs/GaAs - Wet Etching
Material Name: AlGaAs/GaAs
Recipe No.: 6530
Primary Chemical Element in Material: Al, Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
H2SO4:H2O2:H2O (4:1:1); Application: AlGaAs/GaAs mesa etch; HCl:H2O2:H2O) (1:4:40).
Application: AlGaAs/GaAs stain for SEM cross-sections.
Thermal oxidation; AlGaAs/GaAs; N2 saturated with H2O; 70 min at 425 C.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MARANOWSKI, S.A., N. Holonyak, T.A. Richard, and F.A. Kish, Photon-Induced Anisotropic
Oxidation along p±n Junctions in AlxGa1˙xAs±GaAs Quantum Well Heterostructures, Appl. Phys.
Lett., 62(17), 2087-89 (1993).