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InP - Wet Etching

Material Name: InP
Recipe No.: 6531
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: H2SO4:H2O2:H2O (3:1:1)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Application: InP substrate cleaning first step for MBE, followed by: Br2/methanol, followed by 5 min DI water rinse to form protective oxide.
Reference: MARUNO, S., Y. Morishita, T. Isu, Y. Nomura, and H. Ogata, Molecular Beam Epitaxy of InP Using Low Energy P. Ion Beam, J. Cryst. Growth, 81, 338-43 (1987).