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GaAs - Wet Etching

Material Name: GaAs
Recipe No.: 6532
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: H2SO4:H2O2:H2O (5:1:1)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. GaAs substrate cleaning for MBE; surface analysis.
Reference: MASSIES, J., and J.P. Contour, Substrate Chemical Etching Prior to MBE: An X-ray Photoelectron Spectroscopy Study of GaAs {001} Surfaces etched by the H2SO4-H2O2-H2O solution, J. Appl. Phys., 58(2), 806-10 (1985).