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InP - Wet Etching

Material Name: InP
Recipe No.: 6533
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
H2SO4:H2O2:H2O (2:1:1); InP etch rate = 500 A/min at 20 C; surface study.
HF-ethanol (10%): InP surface cleaning; surface deoxidation etch.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MASSIES, J., F. Turco, and J.-P. Contour, A Chemical Etching Process to Obtain Clean InP (001) Surfaces, Jpn. J. Appl. Phys., 25(8), L664-L667 (1986).