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InP - Wet Etching

Material Name: InP
Recipe No.: 6534
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
HCl:H3PO4 room temperature etch rate data for (1:19), (1:9), and (1:4).
HCl:H3PO4 (1:9); etch rate dependence on temperature; lateral etch behavior at 60 C; Application to self-aligned HBTs.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MATINE, N., M.W. Dvorak, J.L. Pelouard, F. Pardo, and C.R. Bolognesi, InP by vertical and lateral wet etching, Proc. 10th Int'l Conf. on Indium Phosphide and Related Materials, p. 195 (1998).