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InP - Wet Etching

Material Name: InP
Recipe No.: 6535
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
HCl:H2O (1:1); InP surface morphology after 80 s etch, and etch inhibition with 3 monolayer.
MBE GaAs deposit.
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Thermal degradation, InP surface morphology after 600 C anneal, and degradation inhibition by 1 monolayer of MBE GaAs deposit.
Reference: MATSUI, Y., H. Hayashi, and K. Yoshida, Auger Electron Spectroscopy Study of GaAs Layer Growth on InP Substrate, J. Cryst. Growth, 81, 245-48 (1987).