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InP/InGaAsP - Wet Etching

Material Name: InP/InGaAsP
Recipe No.: 6537
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: Saturated Br water: HBr: H2O (1:10:40)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. InP/InGaAsP photolithography for submicron patterns; InP etch rate = 0.45 µm/min; gives dependence of etch rate and mask undercutting on H2O + Br2 concentrations.
Reference: MATSUOKA, T., and H. Nagai, InP Etchant for Submicron Patterns, J. Electrochem. Soc., 133(12), 2485-91 (1986).