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InGaAsP/InP - Wet Etching

Material Name: InGaAsP/InP
Recipe No.: 6538
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: HNO3:HBr:H2O (1:1:5)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Application: InGaAsP/InP mesa etch for BH laser cavity.
Reference: MATSUOKA, T., K. Takahei, Y. Noguchi, and H. Nagai, 1.5 µm Region InP/GaInAsP Buried Heterostructure Lasers on Semi-Insulating Substrate, Electron. Lett., 17(1), 12-14 (1981).