Alphabetical Index
Browse by Elements
Keyword Search

Dry Etchants
Dry and Wet Etchants
Wet Etchants

Bulk Etchants
Layer Etchants
Nano Etchants
Single Crystal Etchants
Thin Film Etchants
Thin Foil Etchants
Wafer Etchants

Al Etchants
Cd Etchants
Ga Etchants
Ge Etchants
In Etchants
New Etchants
Other Etchants
Si Etchants
Zn Etchants

Help
Home

GaAs - Wet Etching

Material Name: GaAs
Recipe No.: 6539
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition:
H2SO4:H2O2:H2O (3:1:1); GaAs planar surface etch prior to study of HCl treatment.
HCl (36%); GaAs treatment to remove surface oxide; study of dependence on HCl temperature and H2O rinse.
Procedure (Condition): No data
Note: Wet etchant by chemical composition.
Reference: MATSUSHITA, K., N. Suzuki, S. Okuyama, and K. Okuyama, Hydrophobicity of a hydrochlorictreated GaAs surface analyzed by contact angle measurement, J. Electrochem. Soc., 145(4), 1381 (1998).