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InGaAs InP - Wet Etching

Material Name: InGaAs InP
Recipe No.: 6540
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: H2SO4:H2O2:H2O (1:8:1)
Procedure (Condition): No data
Note: Wet etchant by chemical composition. Application: InGaAs InP mesa etch.
Reference: MATSUSHIMA, Y., K. Sakai, and T. Yamamoto, Zn-diffused InGaAs/InP Avalanche Photodetector, Appl. Phys. Lett., 35, 466 (1979).