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Ge - Wet Etching

Material Name: Ge
Recipe No.: 7439
Primary Chemical Element in Material: Ge
Sample Type: Crystal, bulk
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 25 HN03 + 15 HF + 15 HAc + 0.3 Br2
Procedure (Condition): RT, 1 1/2 min; prolonged etching leads to polishing.
Note: Selective etchants for semiconductors. Plane: (111), (111), (100). Vogel et al. (1953).
The following abbreviations have been used in the records: MeOH - Methanol, EtOH - Ethanol, PrOH - Propanol, BuOH - Butanol, HxOH - Hexyl alcohol, HFr - Formic acid, HAc - Acetic acid, HTr - Tartaric acid.
Reference: Keshra SANGWAL, ETCHING OF CRYSTALS, THEORY, EXPERIMENT, AND APPLICATION, Elsevier Science Publishers B.V., (Original Reference List) 1987, pp. 406-439.