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GeS - Wet Etching

Material Name: GeS
Recipe No.: 7440
Primary Chemical Element in Material: Ge
Sample Type: Crystal, bulk
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 15% KOH
Procedure (Condition): 80 °C, 2 min
Note: Selective etchants for semiconductors. Plane: (100). Schönherr and Stetter (1975).
The following abbreviations have been used in the records: MeOH - Methanol, EtOH - Ethanol, PrOH - Propanol, BuOH - Butanol, HxOH - Hexyl alcohol, HFr - Formic acid, HAc - Acetic acid, HTr - Tartaric acid.
Reference: Keshra SANGWAL, ETCHING OF CRYSTALS, THEORY, EXPERIMENT, AND APPLICATION, Elsevier Science Publishers B.V., (Original Reference List) 1987, pp. 406-439.