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HgSe - Wet Etching

Material Name: HgSe
Recipe No.: 7442
Primary Chemical Element in Material: Hg
Sample Type: Crystal, bulk
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 6 HCl + 2 HN03 + 3 H20
Procedure (Condition): 25°C, 2 - 5 min; Se film removed by immersing briefly in HN03 + HAc + HCl + H2S04 polish; then rinse in water.
Note: Selective etchants for semiconductors. Plane: (TTT). Warekois et al. (1962).
The following abbreviations have been used in the records: MeOH - Methanol, EtOH - Ethanol, PrOH - Propanol, BuOH - Butanol, HxOH - Hexyl alcohol, HFr - Formic acid, HAc - Acetic acid, HTr - Tartaric acid.
Reference: Keshra SANGWAL, ETCHING OF CRYSTALS, THEORY, EXPERIMENT, AND APPLICATION, Elsevier Science Publishers B.V., (Original Reference List) 1987, pp. 406-439.