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HgTe - Wet Etching

Material Name: HgTe
Recipe No.: 7443
Primary Chemical Element in Material: Hg
Sample Type: Crystal, bulk
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: HCl + 1 HNO3
Procedure (Condition): 25°C, 1-3 min; Te face gives uniform appearance.
Note: Selective etchants for semiconductors. Plane: (111). Warekois et al. (1962).
The following abbreviations have been used in the records: MeOH - Methanol, EtOH - Ethanol, PrOH - Propanol, BuOH - Butanol, HxOH - Hexyl alcohol, HFr - Formic acid, HAc - Acetic acid, HTr - Tartaric acid.
Reference: Keshra SANGWAL, ETCHING OF CRYSTALS, THEORY, EXPERIMENT, AND APPLICATION, Elsevier Science Publishers B.V., (Original Reference List) 1987, pp. 406-439.