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InP - Wet Etching

Material Name: InP
Recipe No.: 7444
Primary Chemical Element in Material: In
Sample Type: Crystal, bulk
Uses: Etching
Etchant Name: H-etchant
Etching Method: Wet etching
Etchant (Electrolyte) Composition: 1 HBr + 2 H3P04
Procedure (Condition): 25 °C, 2 min
Note: Selective etchants for semiconductors. Plane: {100}, (TTT). Huber and Linh (1975).
The following abbreviations have been used in the records: MeOH - Methanol, EtOH - Ethanol, PrOH - Propanol, BuOH - Butanol, HxOH - Hexyl alcohol, HFr - Formic acid, HAc - Acetic acid, HTr - Tartaric acid.
Reference: Keshra SANGWAL, ETCHING OF CRYSTALS, THEORY, EXPERIMENT, AND APPLICATION, Elsevier Science Publishers B.V., (Original Reference List) 1987, pp. 406-439.