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Silicon Oxide Etching Mechanism (ICP) - Dry Etching

Material Name: SiO2
Recipe No.: 8498
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: See the Figures 1 and 2.
Procedure (Condition): No data
Note: No data
Reference: PG64936, Chapter 3 Chemical Nano-Processing, 3-4. Etching, Pusan National University Library, South Korea, 2020, pp. 1-59.


Figure 1: Silicon Oxide etching mechanism (ICP).


Figure 2: Silicon Oxide etching mechanism (ICP).