Chalcogenide Glasses (ChG)-Ge23Sb7S70

Chalcogenide Glasses (ChG)-Ge23Sb7S70 - Dry Etching

Material Name: Chalcogenide glasses (ChG)-Ge23Sb7S70
Recipe No.: 8515
Primary Chemical Element in Material: Ge
Sample Type: Thin film
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: Plasma etching was performed using a Unaxis Shuttleline inductively coupled plasma reactive ion etcher (ICP-RIE). Two different etching recipes based on CHF3 and Cl2 were investigated in order to determine the best performance (see Table 1). Both samples A and B were etched by approximately 290 nm at a temperature of 20 C. Sample A had a thickness of 600 nm, and sample B was 650 nm thick. After etching, the samples were coated with a benzocyclobutene (BCB) polymer cladding to protect the surfaces from contamination and to reduce scattering from the sidewalls. The curing of the polymer was performed in a nitrogen oven at a maximum temperature of 220 C.
Procedure (Condition): Fabrication started with standard solvent cleaning of 100-mm diameter silicon wafers with 2 µm of thermal oxide grown on the surface. Electron-beam deposition was used to produce the ChG films on the surface of the silicon dioxide. This deposition method has been previously reported,11 and is further investigated here under different deposition conditions. The deposition was performed at a rate of about 1 nm/a) s, starting with 1.1 cm2 cylindrical rods of bulk glass with the composition Ge23Sb7S70. Bulk Ge23Sb7S70 glass was fabricated by traditional melt quenching techniques A film approximately 630-nm-thick was deposited on the surface of the wafer.
Note: No data
Reference: Jeff Chiles, et al., Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching, APPLIED PHYSICS LETTERS 106, (2015), pp. 111110-1 - 111110-4.

Table 1: Plasma etching parameters.