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Conventional SiC RIE - Dry Etching

Material Name: 4H-SiC
Recipe No.: 8519
Primary Chemical Element in Material: Si
Sample Type: Thin film, substrate
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: See the Figure 1.
Procedure (Condition): No data
Note: No data
Reference: Robert S. Okojie, Concept Demonstration of Dopant Selective Reactive Etching (DSRIE) in Silicon Carbide, NASA Glenn Research Center, Cleveland OH, PowerPoint Presentation, NASA Aeronautics Research Mission Directorate (ARMD), 2015 Seedling Phase II Technical Seminar November 17 & 19, 2015, pp. 1-26.


Figure 1: Conventional SiC RIE.