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Dishing and Erosion - Dry Etching

Material Name: Copper
Record No.: 1
Primary Chemical Element in Material: Cu
Sample Type: Layer
Uses: Polishing
Etchant Name: None
Etching Method: Polishing
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note:
CMP problems.
Dishing – occurs due to the flexing of the polish pad into a trench, which then forms a concave surface that propagates with the polishing front leaving dished material – see Fig. 1. Generally greater for larger features.
Erosion – local loss of supporting material surrounding the trench. Generally greater for small-pitch, high density lines.
Reference: Arokia Nathan, Etching and Chemo-Mechanical Polishing, E&CE 493 Topic 2/730 Topic 13 – Nanoelectronics: Winter 2005, PowerPoint Presentation, pp. 1-35.


Figure 1: Cu deposition topography before and after CMP.