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Shallow Grinding Lines

Material Name: Silicon
Record No.: 108
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Polishing
Etchant Name: None
Etching Method: Polishing
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: A SEM picture of Ultra Poligrind wafer surface is shown in Fig 1, showing grinding lines and other scratches which, however, are very shallow. Particles on the surface are silicon and originated from the sample preparation.
Reference: Petteri Kilpinen, KOH anisotropic silicon etching for MEMS accelerometer fabrication, PhD Thesis, Aalto University, 2014, p. 132.


Figure 1: SEM picture of Ultra Poligrind wafer surface which shows shallow grinding lines and other shallow scratches.