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Corner Cavity in Collector Mesa

Material Name: InGaP
Record No.: 111
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: S. Mitra, S. Kiefer, M. Nair, P. Sanders, J. Steele, M. Sutton, S. Wilson, H. Henry, D. Hill, M. Sadaka, Backside Photoemission and Infrared Microthermography for Rapid Debug of Compound Semiconductor Devices, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 173-176.


Figure 1: Corner cavity in collector mesa causing Icbo leakage was corrected with a mask change and improved etch process.