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Metal Residue Between BL and VSS-Line IV

Material Name: Silicon
Record No.: 116
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: In this case, the device that was returned from our customer is 0.15 µm process technology, 3-level metal design 18-Mb synchronous SRAM with a double column failure. The device presents normal IDD leakage under 1.5V constant voltage. A short between neighboring bitlines was suspected due to its IDD level and layout.
Reference: Cheng-Piao Lin, Cheng-Chun Ting, Chin-Hsin Tang, Cheng-Hsu Wu, Chih-Ming Kuo, Yung-Sheng Huang, Application of Various Fault Localization Techniques to Different Types of 6T-SRAM column Failures, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 259-265.


Figure 1: Photoemission image under simple write operation mode.


Figure 2: SEM image of photoemission located metal residue between neighboring BLs.