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Damaged Layer

Material Name: Silicon
Record No.: 120
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Wet etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Generally, the damaged layer consists of two layers: an inner layer which is the stopping region of Ga ions and an outer damaged layer shell which is the ion bombardment damaged layer.
Reference: Chin Kai Liu, Chi Jen. Chen, Jeh Yan.Chiou, David Su, A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 313-316.


Figure 1: TEM result of damaged layer.