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Wafer Spinning Rate

Material Name: Silicon
Record No.: 124
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Contamination
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: In addition to blocking ion paths into target surfaces, the arrival of particles onto the surface of rapidly moving wafer s can cause serious impact damage to fine featured IC device structures (Fig.1). For 200 mm wafers on a spinning wheel with a 1200 mm radius to the wafer center and a 1250 rpm rotation rate, the lateral wafer motion is ~83 m/s. The impact of a part icle on <0.25 µm wide poly Si lines is sufficient to shatter the structures, with the extent of damage increasing for smaller device dimensions.
Reference: Michael I. Current, Heiner Ryssel, Chapter 12, Ion Beam Purity and Wafer Contamination, ResearchGate, 2018, https://www.researchgate.net/publication/330357088, pp. 31-32.


Figure 1: Damage to 100 nm wide poly Si lines from particle impacts on a wafer spinning at ~83 m/s on a spinning wheel end station.