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Necking

Material Name: Silicon
Record No.: 130
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note:
- Can be due to heavy polymer deposition at the top of the contact or from redeposition of polymer precursors forward scattered from photoresist.
- Position of neck may be dependent on the angle in the resist.
Reference: Steve Sirard, Introduction to Plasma Etching, Lam Research Corporation, PowerPoint Presentation, https://docplayer.net, 2020, pp. 1-58.


Figure 1: Necking.