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Bowing

Material Name: Silicon
Record No.: 131
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Bowing of the feature sidewall can have several root causes
- Ion scattering from the resist mask (dependent on facet.
- Ion scattering in the sheath (lower pressure may help).
- Too much oxygen in the process (less sidewall polymer protection, leads to more isotropic etch).
- Exacerbated by polymers that deposit well at the top of features, but deposit poorly deeper down the feature.
Reference: Steve Sirard, Introduction to Plasma Etching, Lam Research Corporation, PowerPoint Presentation, https://docplayer.net, 2020, pp. 1-58.


Figure 1: Bowing.