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Microtrenching

Material Name: Silicon
Record No.: 132
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Microtrenching Localized higher etch rate at bottom corners of trench.
Potential Mechanisms:
1. Ion scattering from sloped trench sidewalls,
2. Ion deflection due to differential charging of microstructures.
Reference: Steve Sirard, Introduction to Plasma Etching, Lam Research Corporation, PowerPoint Presentation, https://docplayer.net, 2020, pp. 1-58.


Figure 1: Microtrenching.