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Striations

Material Name: Silicon
Record No.: 133
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note:
- Extended roughness on the sidewalls of etched features
- Seen on both holes and trenches
- Due to roughness/striation formation in the resist being transferred to underlayers
- Exacerbated with 193 nm resists
- Likely related to how plasma modifies the resists at different length scales
- Ions impact ~2 nm of surface, causing graphitic densified region
- VUV radiation may either chain scission or cross link at deeper depths (~100 nm)
- Different mechanical properties of modified layers can lead to resist buckling or roughening
Reference: Steve Sirard, Introduction to Plasma Etching, Lam Research Corporation, PowerPoint Presentation, https://docplayer.net, 2020, pp. 1-58.


Figure 1: Striations.