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Cavity Defects, Columnar Defects - GaN

Material Name: GaN
Record No.: 140
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: See the Fig. 1.
Reference: N.Gosset, et al., Effect of surface fluorination on GaN deep dry etching defects, 2004, PowerPoint Presentation, pp. 1-14.


Figure 1: Cavity defects, columnar defects.