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Oxygen Flow Variation - GaN

Material Name: GaN
Record No.: 143
Primary Chemical Element in Material: Ga
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: See the Fig. 1.
Reference: G. MANNAERT, V. PARASCHIV, B. DE JAEGER, M. VAN HOVE, V. PARASCHIV, S. DECOUTERE, K. XU, ETCH DEVELOPMENT FOR E-MODE GaN POWER HEMT FABRICATION, PESEM 2014, Grenoble, France, PowerPoint Presentation, pp. 1-20.


Figure 1: Oxygen flow variation.