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InGaAs Nano-HEMT's: Metal Filling Issue

Material Name: InGaAs
Record No.: 147
Primary Chemical Element in Material: In
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Kwang-Seok Seo, Ultra High-Speed InGaAs Nano-HEMTs, 1st Korea-US Nano Forum, 2003, PowerPoint Presentation, pp. 1-10.


Figure 1: InGaAs Nano-HEMT's: Metal Filling Issue.