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Pattern Shifting - SoC

Material Name: SoC
Record No.: 148
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Onintza Ros, et al., New plasma processes for improved dimensional control and LWR for a 28 nm gate patterning, PESM 2014, PowerPoint Presentation, pp. 1-18.


Figure 1: Pattern shifting.