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Residue Left from RIE/ICP Etching PI 2611 in O2/CF4

Material Name: Polyimide PI 2611
Record No.: 159
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Owen Cherry, Fabrication of an Atom Chip for Rydberg Atom-Metal SurfaceInteraction Studies, MSc Thesis, University of Waterloo, Ontario, 2007, p. 109.


Figure 1: SEM image of the residue left from RIE/ICP etching PI 2611 in O2/CF4. This etch recipe left considerably more residue than a pure O2 etch.