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Pinholes Developed in the SiO2

Material Name: SiO2
Record No.: 160
Primary Chemical Element in Material: Si
Sample Type: Layer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Owen Cherry, Fabrication of an Atom Chip for Rydberg Atom-Metal SurfaceInteraction Studies, MSc Thesis, University of Waterloo, Ontario, 2007, p. 109.


Figure 1: SEM image of a polyimide PI 2611 film etched in O2 using a SiO2 etch mask. During the etch, pinholes developed in the SiO2, causing a highly undercut film with rough edges. An Al etch mask consitently gives smooth edges with less undercut.