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Arcing Generated Aluminum Particle on Wafer Surface

Material Name: Silicon
Record No.: 169
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: Etching
Etchant Name: None
Etching Method: Dry etching
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note:
Arcing in terms of technology:
- higher particle density caused by aluminum particles.
Arcing in terms of physics:
- temporary local instability of plasma.
Reference: Michael Hartenberger, Lars Christoph, Andreas Steinbach, Arcing prevention by dry clean optimization at Shallow Trench Isolation (STI) Etch in AMAT MxP by use of plasma parameters, 2nd AEC/APC Conference Europe, April 18th-20th 2001, Dresden, PowerPoint Presentation, pp. 1-21.


Figure 1: Arcing generated Aluminum particle on wafer surface.