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Gate Conductor (GC) Short

Material Name: No data
Record No.: 177
Primary Chemical Element in Material: No data
Sample Type: Wafer
Uses: No data
Etchant Name: None
Etching Method: No data
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Liquid crystal hotspot analysis and emission microscopy were employed to localize the defect, but no significant information could be gleaned from these methods. As a result, detailed circuit layout review coupled with layer by layer deprocessing and cross-sections were used to isolate the fail. Cross-sections in the suspect area showed that certain isolated gate lines were much wider than expected, resulting in a substantial loss of alignment margin, and thus a high probability of contact to GC shorts, see figure 1.
Reference: Luis Andrade, Timothy Bynum, Richard Doyle, Brian Flaherty, David Grammer, Chris Jacobs, Mark Luzar, Eric McDaniel, Dave Ricks, Randall Stanley, Tom Taylor, Targeted Defect Analysis for Yield Improvement, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 571-577.


Figure 1: Cross-section image showing a contact to gate conductor (GC) short.