Silicon Defect with Very Gross Electrical Leakage

Silicon Defect with Very Gross Electrical Leakage

Material Name: Silicon
Record No.: 179
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: No data
Etchant Name: None
Etching Method: No data
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: No data
Reference: Erick M. Spory, N-Channel Sub-Threshold Leakage “Pipes” Generated From Micro-Twinning Near Shallow Trench Isolation Interface, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 599-606.

Figure 1: Top-down SEM photo of known failing location deprocessed to polysilicon and active. The horizontal lines indicate the actual final TEM sample thickness.

Figure 2: SEM photo on specific transistor known for failing very gross electrical leakage (i.e., greater than 5 uA). Note silicon defect decorations following a 20 second Wright etch.