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Open Metal Line

Material Name: Silicon
Record No.: 180
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: No data
Etchant Name: None
Etching Method: No data
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Several devices manufactured in Motorola’s HIP6SOI process were failing the same scan tests after 168 hours and 504 hours of burn-in, and were submitted for analysis. One of the failing devices was probed on the Emiscope while exercising it with the failing scan test, with a loop length of approximately 60 us. The power supply voltage of the device was 1.8V.
Reference: Dan Bodoh, et al., Defect Localization Using Time-Resolved Photon Emission on SOI Devices that Fail Scan Tests, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 655-661.


Figure 1: The root cause in Case Study 2 was identified as electromigration creating an open in this metal line. The electromigration was caused by burnin code that over-stressed the device.