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Tungsten Stringer Between Center Contacts

Material Name: Solder
Record No.: 182
Primary Chemical Element in Material: Cu
Sample Type: Wafer
Uses: No data
Etchant Name: None
Etching Method: No data
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Figure 1 is photograph of a Tungsten stringer defect discovered in failure analysis of a minV(DD) outlier for a LSI Logic ASIC. The FA chip was screened as an SPP outlier of the wafer’s intrinsic minV(DD) distribution. This is an outlier from the first step of the feed-forward minV(DD) test.
Reference: W. Robert Daasch, Parametric Variation or Defects? Statistical Post-Processing Analysis of Wafer-Sort Data, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 703-712.


Figure 1: Failure Analysis of a minV(DD) outlier. Defect is the Tungsten stringer between center contacts.