Poly Short Line

Poly Short Line

Material Name: Silicon
Record No.: 185
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: No data
Etchant Name: None
Etching Method: No data
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Physical de-processing was performed on the failing sample to check both metal 1 and gate poly. A SEM verified that a poly short existed between the pump line and node n3 (refer to Figures 1 and 2).
Reference: Hui Pan, Thomas Gibson, Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 771-775.

Figure 1: SEM Result after an Oxide Etch.

Figure 2: SEM Result of the Bottom Poly Structure (after Partial Poly Etch).