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Poly Short Line

Material Name: Silicon
Record No.: 186
Primary Chemical Element in Material: Si
Sample Type: Wafer
Uses: No data
Etchant Name: None
Etching Method: No data
Etchant (Electrolyte) Composition: No data
Procedure (Condition): No data
Note: Figures 10 and 11 show SEM images implementing the FIB cuts and metal connection. The removal of device M51 was repeated on a second part to verify NMOS M51 as the cause of the leakage.
Reference: Syd Wilson, Manoj Nair, Michael Vicker, Richard B Meador, George Smoot, Paul Sanders, Scott Kiefer, John Steele and Mauri Sutton, Debug and Fault Isolation of an RF/IF Circuit For 3G Cellular Applications With High Leakage: A Case Study, ISTFA 2002, Proceedings of the 28th International Symposium for Testing and Failure Analysis, 3-7 November 2002, Phoenix Civic Center, Phoenix, Arizona, pp. 777-782.


Figure 1: SEM image of FIB cuts and bypass trace to isolate NMOS M51.


Figure 2: Magnified SEM image of FIB cuts to isolate NMOS M51.